Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

被引：0
|
作者：
Xiaobing Yan
Hua Hao
Yingfang Chen
Shoushan Shi
Erpeng Zhang
Jianzhong Lou
Baoting Liu
机构：
[1] Hebei University,College of Electron and Information Engineering
[2] Chinese Academy of Sciences,The Laboratory of Nano
[3] Hebei University,Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics
来源：
Nanoscale Research Letters | / 9卷
关键词：
Resistive switching; Self-rectifying; Schottky barrier;
D O I：
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摘要：
We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag electrode and In-Ga-Zn-O films, identified by replacing Ag electrode with Cu and Ti metals. The reverse current at 1.2 V of LRS is strongly suppressed and more than three orders of magnitude lower than the forward current. The Schottky barrier height was calculated as approximately 0.32 eV, and the electron injection process and resistive switching mechanism were discussed.
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