Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields

被引:0
|
作者
Yu G. [1 ]
Upadhyaya P. [1 ]
Fan Y. [1 ]
Alzate J.G. [1 ]
Jiang W. [1 ]
Wong K.L. [1 ]
Takei S. [2 ]
Bender S.A. [2 ]
Chang L.-T. [1 ]
Jiang Y. [3 ]
Lang M. [1 ]
Tang J. [1 ]
Wang Y. [3 ]
Tserkovnyak Y. [2 ]
Amiri P.K. [1 ]
Wang K.L. [1 ]
机构
[1] Department of Electrical Engineering, University of California, Los Angeles
[2] Department of Physics and Astronomy, University of California, Los Angeles
[3] Center for Electron Microscopy and State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou
来源
Yu, G. (guoqiangyu@ucla.edu) | 1600年 / Nature Publishing Group卷 / 09期
关键词
Logic devices - Magnetic fields - Magnetization - Magnets - Switching - Torque;
D O I
10.1038/nnano.2014.94
中图分类号
学科分类号
摘要
Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co 20 Fe 60 B 20 /TaO x structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets. © 2014 Macmillan Publishers Limited.
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页码:548 / 554
页数:6
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