Growth temperature impact on MOVPE-grown BInGaAs/GaAs QWs designed for optoelectronic applications

In this work, quaternary BInGaAs single quantum wells have been grown on GaAs substrate by metal–organic vapor-phase epitaxy. The effect of the growth temperature (520 °C, 550 °C, and 580 °C) has been investigated structurally, morphologically, and optically for the first time. High-resolution X-ray diffraction proves the simultaneous increase of the boron and the indium incorporation with decreasing the growth temperature. The atomic force microscopy measurement shows a growth-mode transition from two-dimensional germination to the step-bunching mode, when growth temperature changes from 520 to 580 °C which affects the optical response. The photoluminescence study predicts that the low growth temperature is the best condition to improve the investigated structure. An abnormal temperature dependence of the photoluminescence peak position, the full width at half maximum, and the integrated intensity due to the thickness, strain, and composition fluctuations are major causes. Using the localized-state ensemble model, we quantitatively prove a reduction in the broadening width of the Gaussian-type density of states for localized-state ensemble distribution, an increase in the related lifetime ratio, and a decrease in the related electron–phonon interaction parameters at the high growth temperatures. An enhancement of about 1.33 times is achieved with varying one growth factor just by 30 °C related to the reduction in the non-radiative lifetime rate (1/τtr). The time-resolved photoluminescence shows the effect of localization on the recombination time and its dependence on the growth temperature. The proposed structure is a promoting step toward a possible dual application: telecom wavelengths and multi-junction solar cell.