Surface Proton Conduction of Sm-Doped CeO2-δ Thin Film Preferentially Grown on Al2O3 (0001)

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作者
D. Nishioka
T. Tsuchiya
W. Namiki
M. Takayanagi
K. Kawamura
T. Fujita
R. Yukawa
K. Horiba
H. Kumigashira
T. Higuchi
机构
[1] Tokyo University of Science,Department of Applied Physics
[2] National Institute for Materials Science (NIMS),International Center for Materials Nanoarchitectonics (WPI
[3] High Energy Accelerator Organization (KEK),MANA)
[4] Tohoku University,Photon Factory
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关键词
Sm-doped CeO; (SDC); Thin film; Mixed valence state; Surface proton conduction; O–H bond;
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摘要
Sm-doped CeO2-δ (Ce0.9Sm0.1O2-δ; SDC) thin films were prepared on Al2O3 (0001) substrates by radio frequency magnetron sputtering. The prepared thin films were preferentially grown along the [111] direction, with the spacing of the (111) plane (d111) expanded by 2.6% to compensate for a lattice mismatch against the substrate. The wet-annealed SDC thin film, with the reduced d111 value, exhibited surface protonic conduction in the low-temperature region below 100 °C. The O1s photoemission spectrum exhibits H2O and OH− peaks on the SDC surface. These results indicate the presence of physisorbed water layers and the generation of protons on the SDC (111) surface with oxygen vacancies. The protons generated on the SDC surface were conducted through a physisorbed water layer by the Grotthuss mechanism.
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