Scattering processes in a two-dimensional semimetal

被引：0
|
作者：
E. B. Olshanetsky
Z. D. Kvon
M. V. Entin
L. I. Magarill
N. N. Mikhailov
I. O. Parm
S. A. Dvoretsky
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
来源：
JETP Letters | 2009年 / 89卷
关键词：
73.43.Qt; 73.63.Hs;
D O I：
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学科分类号：
摘要：
The scattering mechanisms in a two-dimensional semimetal based on a HgTe quantum well, where the electron and hole densities are controlled over a wide range by applying the gate voltage, have been studied. It is shown that impurity scattering prevails in this system at low temperatures. Interparticle scattering (in this case, electrons and holes) has been observed to directly affect the resistance of the metal.
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页码：290 / 293
页数：3
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