Secondary cluster ions Ge2− and Ge3−for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

被引：0

作者：

M. N. Drozdov

Yu. N. Drozdov

D. N. Lobanov

A. V. Novikov

D. V. Yurasov

机构：

[1] Russian Academy of Sciences,Institute for Physics of Microstructures

来源：

Semiconductors | 2010年 / 44卷

关键词：

Depth Profile; Depth Resolution; SiGe Layer; Semiconductor Heterostructures; Crater Bottom;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

New possibilities of improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures using a TOF.SIMS-5 spectrometer are discussed. Contributions of ion sputtering artifacts and instrumental effects to depth resolution were analyzed in detail using a Talysurf CCI-2000 optical profilometer to control the shape and roughnesses of the sputtering crater bottom. It was found that the use of Cs+ ions for sputtering makes it possible to minimize roughness development during depth profiling of GeSi/Si structures to depths of 1–1.5 μm. It was shown that the use of secondary cluster ions Ge2− and Ge3− instead of Ge1− and Ge+ allows narrowing the transition regions in measured profiles.

引用

页码：401 / 404

页数：3

共 24 条

[1] Secondary cluster ions Ge 2 - and Ge 3 - for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures
Drozdov, M. N.
Drozdov, Yu. N.
Lobanov, D. N.
Novikov, A. V.
Yurasov, D. V.
SEMICONDUCTORS, 2010, 44 (03) : 401 - 404
[2] SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ions
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[3] Mechanism of abnormal interface artifacts in SIMS depth profiling of a Si/Ge multilayer by oxygen ions
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[4] SECONDARY ION YIELD MATRIX EFFECTS IN SIMS DEPTH PROFILES OF SI/GE MULTILAYERS
GILLEN, G
PHELPS, JM
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WILLIAMS, P
HUES, SM
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[5] Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers
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Sagatova, A.
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[6] Ultra-high depth resolution RES and SIMS of the modification of a Ge delta in Si during 2 keV O2+ sputtering
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[7] Ultra-high depth resolution RBS and SIMS of the modification of a Ge delta in Si during 2 keV O2+ sputtering
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[8] Auger electron spectroscopy depth profiling of Ge/Si multilayers using He+ and Ar+ ions
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1091 - 1095
[9] Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing
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Kim, K. J.
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[10] O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells
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