Two-photon confocal microscopy in the study of the volume characteristics of semiconductors

被引：0
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作者：
V. P. Kalinushkin
O. V. Uvarov
机构：
[1] Russian Academy of Sciences,Prokhorov General Physics Institute
来源：
Technical Physics | 2016年 / 61卷
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摘要：
Zn–Se crystals are used to analyze prospects for application of two-photon confocal microscopy in the study of plane and volume interband and impurity luminescence in semiconductors. Such maps can be formed with a depth step and planar spatial resolution of several micrometers at distances of up to 1 mm from the surface. The method is used to detect luminescence-active inhomogeneities in crystals and study their structure and luminescence characteristics. Prospects for the application of the two-photon confocal microscopy in the study of direct-band-semiconductors and materials of the fourth group are discussed.
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页码：1876 / 1879
页数：3
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