Effect of post-implantation annealing on the current-voltage characteristics of IR photodiodes based on p-HgCdTe

被引：0
|
作者：
A. V. Vishnyakov
V. S. Varavin
M. O. Garifullin
A. V. Predein
V. G. Remesnik
I. V. Sabinina
G. Yu. Sidorov
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
来源：
Optoelectronics, Instrumentation and Data Processing | 2009年 / 45卷 / 4期
关键词：
mercury cadmium telluride; MCT; HgCdTe; photodiode; tunnel currents; numerical modeling of current-voltage characteristics; numerical modeling of mercury diffusion; ion implantation; post-implantation annealing;
D O I：
10.3103/S8756699009040049
中图分类号：
学科分类号：
摘要：
Current-voltage characteristics of IR photodiodes and distributions of charge carriers in n+-n−-p-structures based on vacancy p-doped Hg1 − xCdxTe films with x = 0.22 are examined. Three-dimensional numerical modeling of the distribution of charge carriers and current-voltage characteristics during photodiode annealing is performed. The calculations predict that large tunnel currents in diodes after implantation can result from an elevated (more than 1015 cm−3) concentration of donors in the n−-layer, which enhances tunneling by decreasing the thickness of the space charged region of the n-p-junction, and also from a small (less than 3 µm) depth of the p-n-junction.
引用
收藏
页码：308 / 315
页数：7
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