Lithium-drifted, silicon radiation detectors for harsh radiation environments

被引：0
|
作者：
J. Grant
C. Buttar
M. Brozel
A. Keffous
A. Cheriet
K. Bourenane
A. Bourenane
F. Kezzoula
H. Menari
机构：
[1] University of Glasgow,Department of Physics and Astronomy
[2] University of Bristol,School of Chemistry
[3] Unité de Développment de la Technologie du Silicium,undefined
来源：
Journal of Materials Science: Materials in Electronics | 2008年 / 19卷
关键词：
Reverse Bias; Applied Bias; Intrinsic Region; Charge Collection Efficiency; Alpha Peak;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A model describing the passivation by Li atoms of acceptors arising from radiation damage in Si detectors has been developed. Our studies indicate that it is possible to produce a protocol that will allow the in situ recovery of Lithium-drifted Si particle detectors under irradiation by high-energy particles. Our model for particle damage recovery is supported by preliminary results obtained on the recovery of old, degraded detectors.
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页码：14 / 18
页数：4
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