Energy relaxation of excitonlike polaritons in semiconductor microcavities: Effect on the parametric scattering of polaritons

Polariton emission in GaAs-based microcavities has been studied under variable conditions, which made it possible to excite (a) polaritons from the upper polariton branch and hot free polaritons and electrons, (b) polaritons from the lower polariton branch (LPB) and localized excitons, and (c) the mixed system. Variation of the excitation conditions leads to substantial differences in the energy distributions of polaritons and in the temperature dependences of polariton emission. It is established that the energy relaxation of resonantly excited LPB polaritons via polariton and localized exciton states at liquid helium temperatures is ineffective. Instead, the relaxation bottleneck effect is suppressed with increasing temperature by means of exciton delocalization (due to thermal excitation by phonons). The most effective mechanism of relaxation to the LPB bottom is via scattering of delocalized excitons on hot free carriers. It is found that the slow energy relaxation of polaritons excited below the free exciton energy can be significantly accelerated at low temperatures by means of additional weak generation of hot excitons and, especially, hot electrons. This acceleration of the energy relaxation of polaritons by means of additional overbarrier photoexcitation sharply decreases the barrier for stimulated parametric scattering of polaritons excited at an LPB inflection point. Therefore, additional illumination can be used to control the polariton-polariton scattering.