4-Probe Micropatterning and Electrical Measurements Across Individual Grain Boundaries in Electroceramics

被引:0
|
作者
Richard P. Rodrigues
Jin-Ha Hwang
Vinayak P. Dravid
机构
[1] Northwestern University,Department of Materials Science and Engineering
来源
关键词
contact lithography; projection lithography; microelectrode patterning; varistor; zinc oxide; grain boundaries; I-V measurements; ac impedance spectroscopy; Schottky barrier; nonlinearity; breakdown voltage; asymmetric behavior; degradation;
D O I
暂无
中图分类号
学科分类号
摘要
A novel approach combining conventional contact- and projection-lithography techniques has been devised to implement microelectrodes, down to submicron size, across isolated site-specific features as small as 2–3 micron. For both ex-situ and in-situ electrical characterization, such features of interest are isolated interfaces and grain boundaries in electroceramics and multilayer devices, including those in as-prepared TEM specimen. The procedure has been discussed for implementing 4-probe microelectrodes across several individual isolated grain boundaries of a commercial ZnO varistor containing 2–10 micron size grains. In addition, we discuss the results from dc 4-probe I-V and ac 2-probe impedance measurements across individual grain boundaries, and dc 2-probe I-V and ac 2-probe impedance measurements from grain interiors isolating these grain boundaries. Over and above the generally observed properties of isolated grain boundaries, the measurements reveal (1) inhomogeneity and applied-bias-polarity dependent asymmetry in the nonlinear I-V characteristics of grain boundaries, (2) possible presence of non-ohmic electrode-ceramic contact resistance in 2-probe measurements, and (3) a gradual process of irreversible degradation of the nonlinear I-V behavior with respect to thermal runaways upon application of a dc bias across isolated grain boundaries.
引用
收藏
页码:245 / 254
页数:9
相关论文
共 50 条
  • [1] 4-probe micropatterning and electrical measurements across individual grain boundaries in electroceramics
    Rodrigues, RP
    Hwang, JH
    Dravid, VP
    JOURNAL OF ELECTROCERAMICS, 1999, 3 (03) : 245 - 254
  • [2] 4-PROBE ELECTROMETER SYSTEM FOR RESISTIVITY MEASUREMENTS
    CHROBOCZEK, JA
    LINK, J
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1985, 18 (07): : 568 - 570
  • [3] ACCURACY OF 4-PROBE RESISTIVITY MEASUREMENTS ON SILICON
    HARGREAVES, JK
    MILLARD, D
    BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (05): : 231 - &
  • [4] EQUIVALENT ELECTRICAL-RESISTIVITY OF SILICON INGOTS FOR 4-PROBE MEASUREMENTS (EXCHANGE OF EXPERIENCE)
    FEDONIN, AI
    KUVSHINOV, DA
    KOLT, LM
    FINK, EV
    INDUSTRIAL LABORATORY, 1990, 56 (01): : 52 - 53
  • [5] 4-PROBE INSTRUMENT FOR RESISTIVITY MEASUREMENTS OF GERMANIUM AND SILICON
    MACDONALD, AL
    SOLED, J
    STEARNS, CA
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1953, 24 (09): : 884 - 885
  • [7] RESISTIVITY MEASUREMENTS OF INSULATORS USING 4-PROBE TECHNIQUE
    SCHEMMEL, RR
    GORDON, RL
    AMERICAN CERAMIC SOCIETY BULLETIN, 1971, 50 (04): : 366 - &
  • [8] MEASURING ELECTRICAL RESISTIVITY OF COKE LUMPS BY A 4-PROBE TECHNIQUE
    GALPERN, VV
    BRUK, AS
    LEIBOVIC.RE
    COKE & CHEMISTRY USSR, 1968, (10): : 15 - &
  • [9] Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene
    Clark, Kendal W.
    Zhang, X. -G.
    Vlassiouk, Ivan V.
    He, Guowei
    Feenstra, Randall M.
    Li, An-Ping
    ACS NANO, 2013, 7 (09) : 7956 - 7966
  • [10] MEASUREMENT OF THE ANISOTROPY OF ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS BY THE 4-PROBE METHOD
    AIRAPETYANTS, SV
    BRESLER, MS
    SOVIET PHYSICS-SOLID STATE, 1959, 1 (01): : 134 - 135