Micromachining of quartz crystal with excimer lasers by laser-induced backside wet etching

被引：0

作者：

J. Wang

H. Niino

A. Yabe

机构：

[1] National Institute of Materials and Chemical Research,

[2] Higashi 1-1,undefined

[3] Tsukuba,undefined

[4] 305-8565 Ibaraki,undefined

[5] Japan (Fax: +81-298/54-4474,undefined

[6] E-mail: wangjun@nimc.go.jp; yabe@nimc.go.jp),undefined

来源：

Applied Physics A | 1999年 / 69卷

关键词：

PACS: 42.62; 81.40; 81.65;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We fabricated a well-defined pattern of lines and spaces on the surface of a quartz crystal plate (c-SiO2) with micron-sized features, using laser-induced backside wet etching (LIBWE). The line patterns obtained using LIBWE showed a high aspect ratio of about 3. The etch rates of fused silica (a-SiO2) ranged from 5 to 25 nm/pulse with KrF laser irradiation from 0.4–1.3 J/cm2. Threshold fluences for a-SiO2 and c-SiO2 were 0.23 and 0.34 J/cm2, respectively. The single-pulse etch depth was not affected by the repetition rates of laser pulses from 1–50 Hz.

引用

页码：S271 / S273

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