Energy-storage properties of Sr-doped PLZST bulk ceramics and thick films

The dielectric and energy-storage properties of (Pb0.97−xSrxLa0.02)(Zr0.675Sn0.285Ti0.04)O3 (x = 0, 0.005, 0.01, 0.015) bulk ceramics and thick films were investigated. All samples are orthorhombic perovskite antiferroelectric phase and have dielectric temperature relaxation property. Sr-dopant can improve the stability of the antiferroelectric phase and increase the phase transition field, but cause a decrease in dielectric constant. Thick films have a higher maximum tolerable external electric field strength than bulk ceramics. Compared with undoped thick film, the forward phase transition field and the backward phase transition field of the 1.5% doped thick film increased by 32% and 27%, respectively. The maximum polarization of the 1.5% doped thick film is decreased by 17%. The largest recoverable energy-storage density was obtained in thick film with 1% Sr doping. The largest recoverable energy-storage density is 2.77 J/cm3, which is 9.4% higher than the undoped thick film ceramic and 477% higher than the bulk ceramic with 1% Sr doping. The high energy storage density indicates that the obtained thick film is promising for pulsed power capacitors.