Structure and properties of Ti1 − xCrxSe2 substitutional solid solutions

被引：0
|
作者：
A. N. Titov
A. I. Merentsov
V. N. Neverov
机构：
[1] Russian Academy of Sciences,Institute of Metal Physics, Ural Division
[2] Gorkiĭ Ural State University,undefined
来源：
Physics of the Solid State | 2006年 / 48卷
关键词：
71.20.Ps; 71.55.Ht;
D O I：
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学科分类号：
摘要：
Titanium diselenide TiSe2 is doped for the first time with an acceptor impurity through substitution of Cr3+ ions for Ti4+ ions in the host lattice. The structure and electrical resistivity of the TiSe2-based solid solutions are investigated in the vicinity of the compensation point, and the influence of the compensation point on the stability of the charge-density-wave state is analyzed. It is demonstrated that disorder in the guest sublattice does not lead to Anderson localization of charge carriers.
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页码：1472 / 1476
页数：4
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