The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed AlxInyGa1–x–yBizSb1–z/GaSb Heterostructures

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作者：
D. L. Alfimova
M. L. Lunina
L. S. Lunin
A. S. Pashchenko
A. E. Kazakova
机构：
[1] Russian Academy of Sciences,Southern Scientific Center
[2] Platov State Polytechnic University,undefined
来源：
Physics of the Solid State | 2018年 / 60卷
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摘要：
The effect of bismuth on the structural perfection and the luminescent properties of AlxInyGa1–x–yBizSb1–z/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.
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页码：1280 / 1286
页数：6
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