Features of the electrical and photoelectrical properties of nanocrystalline indium and zinc oxide films

被引：0
|
作者：
T. V. Belysheva
M. I. Ikim
A. S. Il’in
P. K. Kashkarov
M. N. Martyshov
Y. Paltiel
L. I. Trakhtenberg
N. P. Fantina
P. A. Forsh
机构：
[1] Karpov Institute of Physical Chemistry,Semenov Institute of Chemical Physics
[2] Russian Academy of Sciences,Applied Physics Department, Center for Nano
[3] Moscow State University,Science and Nano
[4] National Research Center “Kurchatov Institute”,Technology
[5] Moscow University of Physics and Technology,undefined
[6] The Hebrew University of Jerusalem,undefined
来源：
Russian Journal of Physical Chemistry B | 2016年 / 10卷
关键词：
metal oxides; temperature dependence of the conductivity; photoconductivity; localized levels;
D O I：
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学科分类号：
摘要：
Electrical and photoelectrical properties of nanocrystalline zinc oxide and indium oxide films are studied. For these oxides the temperature dependences of conductance are observed to be consisting of two parts with different activation energy. Also photoconductivity relaxation of the oxides can be described by a sum of two exponential functions. The spectral dependencies of nanocrystalline zinc oxide and indium oxide photoconductivity are presented. The photoconductivity arises as samples are illuminated with energy less than band gap. The data are discussed on the basis of model by which the localized states in the band gap play major role.
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页码：810 / 815
页数：5
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