Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)

被引：0
|
作者：
K. Das
S. Das
R. K. Singha
S. K. Ray
A. K. Raychaudhuri
机构：
[1] S N Bose National Centre for Basic Sciences,DST Unit for Nanoscience
[2] Indian Institute of Technology Kharagpur,Department of Physics and Meteorology
来源：
Journal of Nanoparticle Research | 2012年 / 14卷
关键词：
Ge islands; MBE; Ion-beam lithography; Self assembly; Surface patterning;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the growth of Ge islands on Si (001) substrates with lithographically defined two-dimensionally periodic pits using focused ion-beam patterning and molecular beam epitaxy. The formation of circularly ordered Ge islands has been achieved by means of nonuniform strain field around the periphery of the holes due to ion bombardment. Lateral ordering of the Ge islands have been controlled by both the pit size and pit separation. Preferential growth at the pit sites has also been achieved by using appropriate pattern shape and size.
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