Realization of floating triple crossing memristor emulator with dual inflection point static characteristics

The incidence of multiple cross-over points on the v-i contour is an indication of multi-curvature nature of the static characteristics of the memristor. This non-linearity can be utilized in non-linear memristive applications such as chaotic oscillator, multi-bit memory design, multi-level logic design etc. For the first time, the emulation of a floating three-cross-over (pinch-off) memristor by using the mathematical model, which is based on the calculation of inflection points of the static characteristics, has been presented in this work. The knowledge of inflection points can be useful in memristor uses related to multi-level switching applications as these points behave as the switching thresholds between the different curvatures’ regions. Moreover, the reported floating three-pinch-off memristor emulator employs only two VDTAs (Voltage Differencing Transconductance Amplifier) and three grounded passive elements. It is important to emphasize that even when the proposed emulator realizes a highly non-linear current–voltage relationship; it does not require any external voltage multiplier IC, which is usual in several conventional memristor emulators. Also, unlike to the previously reported large sized multi-pinch-off fractional order memristor emulators, the presented emulator works purely and only in integer order domain with a compact design structure and at sufficiently high frequencies. The designed circuit has been verified through presented PSPICE generated simulation results based on TSMC level 7 parameters of 0.18um technology. The presented CMOS VDTA based non-linear memristor is also implemented using commercially available IC LM13700 and verified experimentally.