Formation of zinc oxide quasibicrystal structures

Quasibicrystal structures with interblock boundaries of epitaxial zinc oxide layers on a sapphire substrate along a given direction have been obtained for producing submicron electronic devices. It is shown that the use of the buffer technique allows one to grow on one (10\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document} $$\bar 1$$ \end{document}2) α-Al2O3 substrate ZnO layers oriented in the (11\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document} $$\bar 2$$ \end{document}0)and (0001) planes with clearly pronounced interlayer boundaries. The morphology and structural characteristics of these layers are studied.