Structural characterization of self-organized nanostructures

被引：0
|
作者：
S. Ruvimov
Z. Liliental-Weber
J. Washburn
N. N. Ledentsov
V. M. Ustinov
V. A. Shchukin
P. S. Kop’ev
Zh. I. Alferov
D. Bimberg
机构：
[1] Lawrence Berkeley National Laboratory,
[2] A. F. Ioffe Institute,undefined
[3] Technische Universität Berlin,undefined
来源：
Physics of the Solid State | 1998年 / 40卷
关键词：
Transmission Electron Microscopy; GaAs; Electronic Property; Structural Characterization; Imaging Condition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Self-organized nano-objects fabricated in different semiconductor systems are currently at the focus of scientific interest because of their unique electronic properties. Transmission electron microscopy and high-resolution electron microscopy have been used to study the InAs quantum dots grown by molecular-beam epitaxy (MBE) on GaAs and InP substrates. Optimal imaging conditions for visualization of quantum dots were established. Size, shape, and stability of the equilibrium island arrays were analyzed with respect to the growth conditions. Both decrease and increase of the As pressure compared to the optimal value were shown to destroy the regular arrangement of the islands. Energy benefit due to the strain relaxation in the InAs islands is likely to be the driving force for their formation.
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页码：781 / 783
页数：2
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