Nonlinear current-voltage characteristics of the cross-shaped microstructures based on thin bismuth films

被引：0
|
作者：
A. I. Il’in
A. I. Aparshina
S. V. Dubonos
B. N. Tolkunov
机构：
[1] Russian Academy of Sciences,Institute of Microelectronic Technologies and Special
来源：
Technical Physics Letters | 2000年 / 26卷
关键词：
Microstructure; Electron Transport; Bismuth; Ballistic Electron; Property Analogue;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The deposition of bismuth films under a residual gas pressure 10−6 Pa results in the “metal-type” variation of conductivity at low temperatures. Conductivity of the cross-shaped microstructures based on these films exhibits the properties analogues to those of the ballistic electron transport in 2D systems.
引用
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页码：439 / 442
页数：3
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