Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design

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作者：
Wei Xiao
Xiaohong Zheng
Hua Hao
Lili Kang
Lei Zhang
Zhi Zeng
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS
[2] University of Science and Technology of China,Science Island Branch of Graduate School
[3] Nanjing Forestry University,College of Information Science and Technology
[4] Hangzhou Normal University,School of Physics
[5] Henan University,Institute for Computational Materials Science, School of Physics and Electronics
[6] Shanxi University,State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy
[7] Shanxi University,Collaborative Innovation Center of Extreme Optics
来源：
npj Computational Materials | / 9卷
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摘要：
We propose that the double barrier effect is expected to enhance the tunneling electroresistance (TER) in the ferroelectric tunnel junctions (FTJs). To demonstrate the feasibility of this mechanism, we design a model structure of Pt/BaTiO3/LaAlO3/Pt/BaTiO3/LaAlO3/Pt double barrier ferroelectric tunnel junction (DB-FTJ), which can be considered as two identical Pt/BaTiO3/LaAlO3/Pt single barrier ferroelectric tunnel junctions (SB-FTJs) connected in series. Based on density functional calculation, we obtain the giant TER ratio of 2.210 × 108% in the DB-FTJ, which is at least three orders of magnitude larger than that of the SB-FTJs of Pt/BaTiO3/LaAlO3/Pt, together with an ultra-low resistance area product (0.093 KΩμm2) in the high conductance state of the DB-FTJ. Moreover, it is possible to control the direction of polarization of the two single ferroelectric barriers separately and thus four resistance states can be achieved, making DB-FTJs promising as multi-state memory devices.
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