Neutron transmutation doping of silicon 30Si monoisotope with phosphorus

被引：0
|
作者：
A. N. Ionov
P. G. Baranov
B. Ya. Ber
A. D. Bulanov
O. N. Godisov
A. V. Gusev
V. Yu. Davydov
I. V. Il’in
A. K. Kaliteevskiĭ
M. A. Kaliteevskiĭ
A. Yu. Safronov
I. M. Lazebnik
H. -J. Pohl
H. Riemann
N. V. Abrosimov
P. S. Kop’ev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] TsENTROTEKh Research and Technology Center,Konstantinov Institute of Nuclear Physics
[3] Russian Academy of Sciences,Institute for Chemistry of High
[4] VITCON Projectconsult GmbH,Purity Substances
[5] Leibniz Institute of Crystal Growth,undefined
[6] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2006年 / 32卷
关键词：
61.72.-y; 81.05.-t;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Phosphorus-doped silicon 30Si monoisotope samples with a highly homogeneous impurity distribution at a concentration of 5 × 1016 cm−3 were obtained for the first time by means of neutron transmutation doping.
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页码：550 / 553
页数：3
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