Study of waveguide coupling efficiency in hybrid silicon lasers

被引：0

作者：

Ran Q.-J. ^{[1
]}

Han P.-D. ^{[1
]}

Quan Y.-J. ^{[1
]}

Gao L.-P. ^{[1
]}

Zeng F.-P. ^{[1
]}

Zhao C.-H. ^{[1
]}

机构：

[1] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science

来源：

Optoelectronics Letters | 2008年 / 4卷 / 04期

基金：

中国国家自然科学基金;

关键词：

TN256;

D O I：

10.1007/s11801-008-8030-6

中图分类号：

学科分类号：

摘要：

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's. © 2008 Tianjin University of Technology and Springer-Verlag GmbH.

引用

页码：239 / 242

页数：3

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