In this work, the effect of thermal fluctuation field on the magnetization dynamics in Co1.5Fe1.5Ge alloy free layer is reviewed in a spin-valve structure with in-plane magnetization using the stochastic Landau-Lifshitz-Gilbert-Slonczewski (s-LLGS) equation taking into account the thermally assisted switching. The ultimate goal is to systematically study the heating effect on the magnetization reversal by simulating the magnetization dynamics in different thicknesses under very low current densities of about 106–105 A/cm2 in the presence of the thermal effect by applying different temperature values between T = 50 and T = 200 K. Results showed that the magnetization has different reversal processes among the large and small temperature values due to the competition between the thermal energy Et and magnetic energy barrier Eb, which allows the magnetization to trigger switching for specific temperature values. Consequently, at a temperature increase of about 200 K, we have proved that the magnetization reversal in Co1.5Fe1.5Ge alloy free layer is possible under a low current density of J =− 3.5 × 106 A/cm2. Additionally, we carefully examined the thermal impact on the threshold current density and switching time through analyzing the magnetization behavior for each temperature value, and as a result, we succeeded to reduce the critical current density in Co1.5Fe1.5Ge/Ag/Co1.5Fe1.5Ge structure from Jc = − 5.7 × 106 A/cm2 to Jc = − 9.5 × 105 A/cm2 for a thickness of 1 nm.
机构:
Hassan II Univ Casablanca, Fac Sci Ben Msik, Dept Phys, Condensed Matter Phys Lab, D El Harty Av,BP 7955, Casablanca 20165, MoroccoHassan II Univ Casablanca, Fac Sci Ben Msik, Dept Phys, Condensed Matter Phys Lab, D El Harty Av,BP 7955, Casablanca 20165, Morocco
El Hafidi, Moulay Youssef
El Hafidi, Mohamed
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Hassan II Univ Casablanca, Fac Sci Ben Msik, Dept Phys, Condensed Matter Phys Lab, D El Harty Av,BP 7955, Casablanca 20165, MoroccoHassan II Univ Casablanca, Fac Sci Ben Msik, Dept Phys, Condensed Matter Phys Lab, D El Harty Av,BP 7955, Casablanca 20165, Morocco
机构:
Natl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
Taniguchi, Tomohiro
Isogami, Shinji
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Natl Inst Mat Sci, Tsukuba 3050047, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
Isogami, Shinji
Okame, Shuji
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TDK Corp, Adv Prod Dev Ctr, Technol & Intellectual Property HQ, Ichikawa, Chiba 2728558, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
Okame, Shuji
Nakada, Katsuyuki
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TDK Corp, Adv Prod Dev Ctr, Technol & Intellectual Property HQ, Ichikawa, Chiba 2728558, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
Nakada, Katsuyuki
Komura, Eiji
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TDK Corp, Adv Prod Dev Ctr, Technol & Intellectual Property HQ, Ichikawa, Chiba 2728558, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
Komura, Eiji
Sasaki, Tomoyuki
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TDK Corp, Adv Prod Dev Ctr, Technol & Intellectual Property HQ, Ichikawa, Chiba 2728558, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
Sasaki, Tomoyuki
Mitani, Seiji
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Natl Inst Mat Sci, Tsukuba 3050047, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
Mitani, Seiji
Hayashi, Masamitsu
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Natl Inst Mat Sci, Tsukuba 3050047, Japan
Univ Tokyo, Dept Phys, Tokyo 1138654, JapanNatl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan