A SiC MOSFET-based parallel multi-inverter inductive power transfer (IPT) system

被引：0

作者：

Qiang Bo

Lifang Wang

Yuwang Zhang

机构：

[1] Chinese Academy of Sciences,Institute of Electrical Engineering

[2] University of Chinese Academy of Sciences,undefined

来源：

Journal of Power Electronics | 2022年 / 22卷

关键词：

SiC MOSFET; Inductive power transfer; Power expansion; Drive asynchrony; Circulating current suppression; Compensation network parameter design;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A parallel multi-inverter inductive power transfer (IPT) system based on SiC MOSFETs is presented to upgrade the power level and to suppress the circulating current. First, the basic principle and a mathematical model of a parallel multi-inverter IPT system are analyzed, and the output current and power for each of the parallel inverters are modeled. Second, the compensation network parameters for the parallel multi-inverter IPT system are configured and a cooperative control strategy is given. Third, various circulating loops and zero-voltage-switching (ZVS) operation are studied. Finally, a 1.2 kW IPT system is built for experimental verification. Results obtained with the experimental system demonstrate that the output power ratio for each of the parallel inverters is about 1:2 and all of them achieve ZVS. In addition, the maximum efficiency of the DC–DC system is measured to be 92.53%, while the circulating current amplitude is only 0.2 A.

引用

页码：1047 / 1057

页数：10

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