Memories are made of …

被引:0
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作者
Angus Kingon
机构
[1] North Carolina State University,the Department of Materials Science and Engineering
来源
Nature | 1999年 / 401卷
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摘要
One elusive goal in semiconductor technology is realizing the ideal nonvolatile memory -- that is, one that retains information when the power is switched off without battery back-up. In this context, so-called ferroelectric random access memories are promising. Work on a particular form of ferroelectric material provides encouraging evidence that it has the desired properties for nonvolatile memory.
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页码:658 / 659
页数:1
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