Characteristics and developments of quantum-dot infrared photodetectors

被引：0
|
作者：
Zhang G.-J. [1 ]
Shu Y.-C. [1 ]
Yao J.-H. [1 ]
Shu Q. [1 ]
Deng H.-L. [1 ]
Jia G.-Z. [1 ]
Wang Z.-G. [1 ]
机构：
[1] Quantum Materials and Devices Lab., Department of Physics, Nankai University
来源：
Frontiers of Physics in China | 2006年 / 1卷 / 3期
关键词：
Dark current; Detectivity; Photocunductive gain; Quantum dot infrared photodetector; Responsivity;
D O I：
10.1007/s11467-006-0030-z
中图分类号：
学科分类号：
摘要：
Quantum dots infrared photodetectors (QDIPs) theoretically have several advantages compared with quantum wells infrared photodetectors (QWIPs). In this paper, we discuss the theoretical advantages of QDIPs including the normal incidence response, lower dark current, higher responsivity and detectivity, etc. Recent device fabrication and experiment results in this field are also presented. Based on the analysis of existing problems, some approaches that would improve the capability of the device are pointed out. © Higher Education Press and Springer-Verlag 2006.
引用
收藏
页码：334 / 338
页数：4
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