Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures

被引：0
|
作者：
N. T. Bagraev
E. S. Brilinskaya
D. S. Gets
L. E. Klyachkin
A. M. Malyarenko
V. V. Romanov
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
[2] St. Petersburg State Polytechnical University,undefined
来源：
Semiconductors | 2011年 / 45卷
关键词：
Landau Level; Fermi Level Position; Haas Oscillation; Momentum Relaxation Time; Static Magnetic Susceptibility;
D O I：
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学科分类号：
摘要：
The dependences of the longitudinal resistance and the static magnetic susceptibility on the magnetic field applied perpendicularly to the plane of an ultranarrow silicon quantum well confined by δ barriers heavily doped with boron demonstrate the high-temperature Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in low magnetic fields. The results are indicative of the implementation of the high-field approximation μB ≫ 1 under these conditions due to the small effective mass of two-dimensional heavy holes, which is confirmed by measurements of temperature dependences of the de-Haas-van-Alphen oscillations.
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页码：1447 / 1452
页数：5
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