Selective dry etching of InGaP over GaAs in inductively coupled plasmas

被引：0

作者：

P. Leerungnawarat

H. Cho

D. C. Hays

J. W. Lee

M. W. Devre

B. H. Reelfs

D. Johnson

J. N. Sasserath

C. R. Abernathy

S. J. Pearton

机构：

[1] University of Florida,Department of Materials Science and Engineering

[2] Plasma Therm,undefined

来源：

Journal of Electronic Materials | 2000年 / 29卷

关键词：

InGaP/GaAs; dry etching; inductively coupled plasmas;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

By exploiting the relatively high volatility of In etch products in CH4/H2 discharges, we were able to obtain a maximum selectivity for InGaP over GaAs of ∼20 at low ion energies and fluxes. Three different inert gas additives to CH4/H2 were examined, with Ar producing higher selectivities than He or Xe. This process is attractive for selective removal of the InGaP emitter in the fabrication of heterojunction bipolar transistors.

引用

页码：586 / 590

页数：4

共 50 条

[1] Selective dry etching of InGaP over GaAs in inductively coupled plasmas
Leerungnawarat, P
Cho, H
Hays, DC
Lee, JW
Devre, MW
Reelfs, BH
Johnson, D
Sasserath, JN
Abernathy, CR
Pearton, SJ
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 586 - 590
[2] Selective dry etching using inductively coupled plasmas Part I. GaAs AlGaAs and GaAs InGaP
Hays, DC
Cho, H
Jung, KB
Hahn, YB
Abernathy, CR
Pearton, SJ
Ren, F
Hobson, WS
APPLIED SURFACE SCIENCE, 1999, 147 (1-4) : 125 - 133
[3] Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas
Lee, JW
Devre, MW
Reelfs, BH
Johnson, D
Sasserath, JN
Clayton, F
Hays, D
Pearton, SJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1220 - 1224
[4] High selectivity Inductively Coupled Plasma etching of GaAs over InGaP
Hays, DC
Cho, H
Lee, JW
Devre, MW
Reelfs, BH
Johnson, D
Sasserath, JN
Meyer, LC
Toussaint, E
Ren, F
Abernathy, CR
Pearton, SJ
APPLIED SURFACE SCIENCE, 2000, 156 (1-4) : 76 - 84
[5] Study of Selective Etching of GaAs over A1GaAs and InGaP Semiconductors in High Density Planar Inductively Coupled BCl3/SF6 Plasmas
Yoo, Seungryul
Ryu, Hyunwoo
Lim, Wantae
Lee, Jewon
Cho, Guan Sik
Jeon, Minhyon
Song, Hanjung
Lee, BongJu
Ko, Jong Soo
Go, Jeung Sang
Pearton, S. J.
KOREAN JOURNAL OF MATERIALS RESEARCH, 2005, 15 (03): : 161 - 165
[6] Dry etching of gaas backside via with inductively coupled plasma
Zhou, Jiahui
Chang, Hudong
Zhang, Xufang
Xu, Wenjun
Li, Qi
Li, Simin
He, Zhiyi
Liu, Honggang
Li, Haiou
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2015, 35 (03): : 306 - 310
[7] Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, DC
Abernathy, CR
Hobson, WS
Pearton, SJ
Han, J
Shul, RJ
Cho, H
Jung, KB
Ren, F
Hahn, YB
COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 281 - 286
[8] Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, D.C.
Abernathy, C.R.
Hobson, W.S.
Pearton, S.J.
Han, J.
Shul, R.J.
Cho, H.
Jung, K.B.
Ren, F.
Hahn, Y.B.
Materials Research Society Symposium - Proceedings, 1999, 573 : 281 - 286
[9] Kinetics of etching in inductively coupled plasmas
Kim, MT
APPLIED SURFACE SCIENCE, 2004, 228 (1-4) : 245 - 256
[10] Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas
Kim, D. Y.
Lee, H. J.
Jung, H. Y.
Lee, N. -E.
Kim, T. G.
Kim, B. H.
Ahn, Jinho
Kim, C. Y.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04): : 857 - 860

← 1 2 3 4 5 →