Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-µm spectral range

被引：0
|
作者：
M. Aidaraliev
N. V. Zotova
S. A. Karandashev
B. A. Matveev
M. A. Remennyi
N. M. Stus’
G. N. Talalakin
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1999年 / 33卷
关键词：
Radiation; Recombination; Active Region; Spectral Range; Magnetic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that type-I or type-II heterojunctions can be formed at heterojunction boundaries, depending on the composition of the active region and/or bounding layers. This is governed by differences in the mechanisms of radiative recombination, the temperature dependence of the radiation wavelength, the polarization type of the radiation, and the current-voltage characteristics.
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页码：200 / 205
页数：5
相关论文
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  • [1] Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-μm spectral range
    Aïdaraliev, M
    Zotova, NV
    Karandashev, SA
    Matveev, BA
    Remennyi, MA
    Stus, NM
    Talalakin, GN
    [J]. SEMICONDUCTORS, 1999, 33 (02) : 200 - 205
  • [2] Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)
    M. Aidaraliev
    N. V. Zotova
    S. A. Karandashev
    B. A. Matveev
    M. A. Remennyi
    N. M. Stus’
    G. N. Talalakin
    T. Beyer
    R. Brunner
    [J]. Semiconductors, 2000, 34 : 488 - 492
  • [3] Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0-3.6 μm)
    Aidaraliev, M
    Zotova, NV
    Karandashev, SA
    Matveev, BA
    Remennyi, MA
    Stus', NM
    Talalakin, GN
    Beyer, T
    Brunner, R
    [J]. SEMICONDUCTORS, 2000, 34 (04) : 488 - 492
  • [4] Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures
    M. Aidaraliev
    N. V. Zotova
    S. A. Karandashev
    B. A. Matveev
    M. A. Remenny
    N. M. Stus’
    G. N. Talalakin
    [J]. Technical Physics Letters, 1998, 24 : 472 - 474
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    Karandashev, SA
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    Talalakin, GN
    [J]. TECHNICAL PHYSICS LETTERS, 1998, 24 (06) : 472 - 474
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    [J]. Technical Physics Letters, 1997, 23 : 41 - 42
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    [J]. TECHNICAL PHYSICS LETTERS, 1997, 23 (01) : 41 - 42
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    Zotova, NV
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    [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1997, 23 (01): : 72 - 76
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    T. Beyer
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    B. A. Matveev
    M. A. Remennyi
    N. M. Stus’
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    [J]. Semiconductors, 2000, 34 : 848 - 852
  • [10] InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K)
    T. N. Danilova
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    O. G. Ershov
    A. N. Imenkov
    M. V. Stepanov
    V. V. Sherstnev
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    [J]. Semiconductors, 1998, 32 : 218 - 221
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