Luminescence quenching in erbium-doped phosphate glass films irradiated with hydrogen ions

被引:0
|
作者
O. N. Gorshkov
A. V. Dmitryuk
V. A. Kamin
A. P. Kasatkin
M. D. Mikhailov
V. A. Novikov
A. B. Chigineva
Yu. I. Chigirinskii
机构
[1] Nizhni Novgorod State University,Physicotechnical Research Institute
[2] SENSIS Company,undefined
[3] HOLOGRATE Corporation,undefined
来源
Technical Physics Letters | 2004年 / 30卷
关键词
Hydrogen; Phosphate; Recombination; Helium; Erbium;
D O I
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中图分类号
学科分类号
摘要
We have studied the effect of irradiation with hydrogen and helium ions on the photoluminescence (PL) of phosphate films doped with ytterbium and erbium. The irradiation with hydrogen ions leads to more effective quenching of the PL from erbium ions and, for the ion doses Φ ≥5×1016cm−2, to a more significant decrease in the PL lifetime as compared to that in the films irradiated with helium ions. The results are interpreted within the framework of a model assuming the formation of OH groups in ion-irradiated glasses, which offer an effective channel of nonradiative recombination of the electron excitations in the material studied.
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页码:325 / 327
页数:2
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