Electron-beam-induced conductivity in self-organized silicon quantum wells

Electron-beam diagnostics are used to study self-organized quantum wells which form within ultrashallow silicon p+-n junctions under the conditions of nonequilibrium boron diffusion. The energy dependence and current-voltage characteristics of the electron-beam-induced conductivity are investigated with relative dominance of both longitudinal and transverse quantum wells, which are oriented parallel and perpendicularly to the p-n junction plane, respectively. Current-voltage characteristics of the electron-beam-induced conductivity are exhibited for the first time with both reverse and forward biasing of the silicon p+-n junction. This became possible because of the presence of self-organized transverse quantum wells within the ultrashallow p+ diffusion profile, while self-organized longitudinal quantum wells promote the appearance of electron-beam-induced conductivity only when the p+-n junction is reverse-biased. The distribution of the probability for the separation of electron-hole pairs across the thickness of the crystal derived from the energy dependences of the electron-beam-induced conductivity reveals effects of the avalanche multiplication of the nonequilibrium carriers as a result of the spatial separation of electrons and holes in the field of a p+-n junction that contains self-organized transverse quantum wells.