Features of the Surface Region of the Semiconductor Structure Formed by Metal-Assisted Chemical Etching of Single-Crystal Silicon

被引：0
|
作者：
N. N. Melnik
V. V. Tregulov
N. B. Rybin
A. I. Ivanov
机构：
[1] Russian Academy of Sciences,Lebedev Physical Institute
[2] Ryazan State University named for S. A. Yesenin,undefined
[3] Ryazan State Radio Engineering University,undefined
来源：
Bulletin of the Lebedev Physics Institute | 2019年 / 46卷
关键词：
metal-assisted chemical etching; metal—semiconductor structure; Raman scattering; capacitance—voltage characteristic;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The surface region of the semiconductor structure containing a porous layer formed by metal-assisted etching of a single-crystal silicon substrate is studied by scanning electron microscopy, Raman spectroscopy, and capacitance—voltage characteristic measurements. A donor-depleted layer is detected within the porous film near its outer surface.
引用
收藏
页码：324 / 327
页数：3
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