Quantum dot;
Spin bias;
Rashba interaction;
Current rectification;
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摘要:
Electronic transport through a triple-quantum-dot ring with three terminals is theoretically studied. By introducing a local Rashba spin-orbit interaction on an individual quantum dot, we find that the spin bias in one terminal drives apparent charge currents with the similar amplitudes and opposite directions of them in the other terminals. This means that in this structure, the spin bias can be measured by virtue of the charge current properties. Meanwhile, the spin transport induced by the spin bias is notable. When a magnetic flux is applied through this ring, we see that it has a nontrivial role in manipulating the charge and the spin transport. Based on the obtained results, we propose this structure can be used as a prototype of a charge and spin current rectifier.
机构:
Northeastern Univ, Coll Sci, Shenyang 110006, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110006, Peoples R China
Yi, Guangyu
Han, Yu
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机构:
Northeastern Univ, Coll Sci, Shenyang 110006, Peoples R China
Liaoning Univ, Dept Phys, Shenyang 110036, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110006, Peoples R China
Han, Yu
Gong, Weijiang
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机构:
Northeastern Univ, Coll Sci, Shenyang 110006, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110006, Peoples R China
Gong, Weijiang
Wu, Haina
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机构:
Northeastern Univ, Coll Sci, Shenyang 110006, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110006, Peoples R China
Wu, Haina
Wei, Guozhu
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h-index: 0
机构:
Northeastern Univ, Coll Sci, Shenyang 110006, Peoples R China
Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110006, Peoples R China
机构:
Northeastern Univ, Coll Sci, Shenyang 110819, Peoples R China
Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110819, Peoples R China
Gong, Weijiang
Li, Hui
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机构:
Northeastern Univ, Coll Sci, Shenyang 110819, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110819, Peoples R China
Li, Hui
Han, Yu
论文数: 0引用数: 0
h-index: 0
机构:
Liaoning Univ, Dept Phys, Shenyang 110036, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110819, Peoples R China
Han, Yu
Wei, Guozhu
论文数: 0引用数: 0
h-index: 0
机构:
Northeastern Univ, Coll Sci, Shenyang 110819, Peoples R China
Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110819, Peoples R China
机构:
Laboratory of Advanced Functional Materials and College of Physics and Engineering,Changshu Institute of TechnologyLaboratory of Advanced Functional Materials and College of Physics and Engineering,Changshu Institute of Technology
洪学鹍
杨希峰
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机构:
Laboratory of Advanced Functional Materials and College of Physics and Engineering,Changshu Institute of TechnologyLaboratory of Advanced Functional Materials and College of Physics and Engineering,Changshu Institute of Technology
杨希峰
冯金福
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机构:
Laboratory of Advanced Functional Materials and College of Physics and Engineering,Changshu Institute of TechnologyLaboratory of Advanced Functional Materials and College of Physics and Engineering,Changshu Institute of Technology