Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements

被引：0
|
作者：
O. V. Semenova
M. Yu. Railko
T. N. Patrusheva
F. F. Merkushev
S. A. Podorozhyak
V. A. Yuzova
A. Ya. Korets
A. I. Khol’kin
机构：
[1] Siberian Federal University,Kurnakov Institute of General and Inorganic Chemistry
[2] Russian Academy of Sciences,undefined
[3] Baltic State Technical University Voenmekh,undefined
来源：
Theoretical Foundations of Chemical Engineering | 2018年 / 52卷
关键词：
porous structures on silicon; electrochemical treatment; ferroelectric; extraction–pyrolytic method; heterostructures on porous silicon with barium titanate;
D O I：
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中图分类号：
学科分类号：
摘要：
The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the porous matrix dimensions, number of deposited barium titanate layers, and material of capacitor structure plates has been analyzed.
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页码：862 / 867
页数：5
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