High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide

被引：0
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作者：
V. V. Bezotosnyĭ
V. V. Vasil’eva
D. A. Vinokurov
V. A. Kapitonov
O. N. Krokhin
A. Yu. Leshko
A. V. Lyutetskiĭ
A. V. Murashova
T. A. Nalet
D. N. Nikolaev
N. A. Pikhtin
Yu. M. Popov
S. O. Slipchenko
A. L. Stankevich
N. V. Fetisova
V. V. Shamakhov
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Lebedev Physical Institute
[2] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2008年 / 42卷
关键词：
42.55.Px; 78.55.Cr; 78.67.De;
D O I：
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学科分类号：
摘要：
The parameters of high-power multimode laser diodes featuring a radiation wavelength of 808 nm obtained on the basis of asymmetric heterostructures with an ultrawide waveguide in the systems of AlGaAs/GaAs and (Al)GaInP/GaInAsP/GaAs are compared. In the lasers based on an AlGaAs/GaAs system, the maximum optical power was limited by optical degradation of the SiO2/Si mirrors and amounted to 4.7 W. In the lasers based on an (Al)GaInP/GaInAsP/GaAs system, the maximum optical power was limited by thermal saturation and equaled 7 W. The obtained results show that the (Al)GaInP/GaInAsP/GaAs system is more reliable from the standpoint of an increase in both the maximum optical power and operation life of lasers.
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页码：350 / 353
页数：3
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