High-throughput screening of 2D van der Waals crystals with plastic deformability

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作者
Zhiqiang Gao
Tian-Ran Wei
Tingting Deng
Pengfei Qiu
Wei Xu
Yuecun Wang
Lidong Chen
Xun Shi
机构
[1] Chinese Academy of Sciences,State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics
[2] ShanghaiTech University,School of Physical Science and Technology
[3] Shanghai Jiao Tong University,State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering
[4] University of Chinese Academy of Sciences,School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study
[5] University of Chinese Academy of Sciences,Center of Materials Science and Optoelectronics Engineering
[6] Xi’an Jiaotong University,Center for Advancing Materials Performance from the Nanoscale (CAMP
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摘要
Inorganic semiconductors exhibit multifarious physical properties, but they are prevailingly brittle, impeding their application in flexible and hetero-shaped electronics. The exceptional plasticity discovered in InSe crystal indicates the existence of abundant plastically deformable two-dimensional van der Waals (2D vdW) materials, but the conventional trial-and-error method is too time-consuming and costly. Here we report on the discovery of tens of potential 2D chalcogenide crystals with plastic deformability using a nearly automated and efficient high-throughput screening methodology. Seven candidates e.g., famous MoS2, GaSe, and SnSe2 2D materials are carefully verified to show largely anisotropic plastic deformations, which are contributed by both interlayer and cross-layer slips involving continuous breaking and reconstruction of chemical interactions. The plasticity becomes a new facet of 2D materials for deformable or flexible electronics.
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