Kinetic effects in n-CdAs2, p-ZnAs2, and CdxZn1 − xAs2 solid solutions

被引:0
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作者
A. Yu. Mollaev
I. K. Kamilov
R. K. Arslanov
L. A. Saipulaeva
R. G. Dzhamamedov
S. F. Marenkin
A. N. Babushkin
机构
[1] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center
[2] Russian Academy of Sciences,Kurnakov Institute of General and Inorganic Chemistry
[3] Ural State University,undefined
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关键词
Electrical Resistivity; Charge Carrier Mobility; Optical Anisotropy; Charge Carrier Density; Versus Compound Semiconductor;
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摘要
The electrical resistivity and Hall factor in n-CdAs2, p-ZnAs2, and n-CdxZn1 − xAs2 were measured at hydrostatic pressures up to 9 GPa and quasi-hydrostatic pressures up to 50 GPa at room temperature. For n-CdAs2, a phase transition was discovered at p = 5.5 GPa; for p-ZnAs2, two phase transitions were discovered: one at P = 10–15 GPa and the other at p = 35–40 GPa. No anomalies were found on ρ(p) and R(p) curves for CdxZn1 − xAs2 when p ≤ 9 GPa.
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页码:121 / 124
页数:3
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