Method for determining critical pressure in assembling hybrid MCT focal plane arrays

被引：0
|
作者：
V. M. Efimov
D. G. Esaev
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
来源：
Optoelectronics, Instrumentation and Data Processing | 2007年 / 43卷 / 4期
关键词：
Focal Plane Array; Deformation Curve; Electrophysical Property; Cold Welding; Gage Dependence;
D O I：
10.3103/S8756699007040115
中图分类号：
学科分类号：
摘要：
A simple method is proposed for determining the critical pressure that does not destroy CdxHg1−xTe diodes in hybrid assembling. The method allows obtaining a set of data that reliably define the critical parameter (the value of force) of the flip-chip hybrid FPA process. The method was tested on CdxHg1−xTe samples (x = 0.21). It is found that the abrupt change in the electrophysical properties of the material occurs when the diameter of indium bumps increases 2 times and more during compression at a pressure of about 3 kg/mm2. The obtained gage load/bump deformation dependences show that this pressure corresponds to the beginning of the region of indium strengthening on the deformation curve.
引用
收藏
页码：370 / 374
页数：4
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