Nanoscale domain switching mechanism in Pb(Zr,Ti)O3 thin film

被引：0
|
作者：
H.R. Zeng
G.R. Li
Q.R. Yin
Z.K. Xu
机构：
[1] State Key Laboratory of High Performance Ceramics and Superfine Microstructures,
[2] Shanghai Institute of Ceramics,undefined
[3] Chinese Academy of Sciences,undefined
[4] Shanghai 200050,undefined
[5] P.R. China,undefined
[6] Department of Physics and Materials Science,undefined
[7] City University of Hong Kong,undefined
[8] Kowloon,undefined
[9] Hong Kong,undefined
来源：
Applied Physics A | 2003年 / 76卷
关键词：
PACS: 61.16.Ch; 77.84Dy; 68.55.Jk; 77.80.Dj; 77.80.Fm;
D O I：
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学科分类号：
摘要：
Pb(Zr,Ti)O3 (PZT) ferroelectric thin film was prepared by the sol-gel technique and crystallized with a (111) preferred orientation. The domain structure and polarization reversal behavior were investigated by using scanning force microscopy (SFM) piezoresponse mode at the nanometer scale. A step structure of approximately 30 nm in width was directly observed, which was formed during the polarization reversal process. The presence of the step structure reveals that the forward domain-growth mechanism is the dominant domain-switching process in our PZT thin films.
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页码：401 / 404
页数：3
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