Tunable lateral spin polarization and spin-dependent collimation in velocity-modulated ferromagnetic-gate graphene structures

被引:0
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作者
Chaiyawan Saipaopan
Wachiraporn Choopan
Watchara Liewrian
机构
[1] King Mongkut’s University of Technology Thonburi,Theoretical and Computational Science Center (TaCS), Department of Physics, Faculty of Science
[2] Christian University of Thailand,Department of Biomedical Engineering, College of Health Science
[3] Ministry of Higher Education,Thailand Center of Excellence in Physics
[4] Science,undefined
[5] Research and Innovation,undefined
关键词
Spin polarization; Velocity modulation; Ballistic transport; Graphene;
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摘要
The influence of spatial variation of Fermi velocity on the spin-polarized transport properties of massless Dirac fermions in proximity-induced ferromagnetic graphene junction was investigated. We found that the velocity ratio ξ causing the width of the spin conductance dip near the Dirac point is broadened as the Fermi velocity ratio increases. In contrast, the effect of the Fermi velocity mismatch does not affect the shifting of the Dirac point. It leads to the indirect measurement of the Fermi velocity ratio that can be tuned by the spin-dependent conductance. In addition to the presence of both the exchange field and the Fermi velocity modulation, we found high spin filtering occurs when the Fermi velocity ratio ξ ≥ 1. Due to the transmission probability of electron with spin down, T↓ is blocked by the effect of Fermi velocity modulation similar to waves travelling through a different media. Moreover, we also found that the resonant transmission of the electron with spin up can be perfectly transmitted through the Fermi velocity barrier at the limit injected angle θ → π/2 for H/EF ≈ 1. The spin transport properties can be controlled by suitably modifying the strength of the ferromagnetic insulator and varying the Fermi velocity modulation, which leads to the highest spin polarization. By manipulating the behavior of spin-dependent collimation and spin beam splitting in this structure, we proposed a spin transport device for making lateral spin polarization. These interesting features will help make the development of spintronic devices in the graphene-based nanostructure.
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页码:2573 / 2581
页数:8
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