Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles

被引:0
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作者
Dong-Hoon Lee
Jung-Min Kim
Ki-Tae Lim
Hyeong Jun Cho
Jin Ho Bang
Yong-Sang Kim
机构
[1] Sungkyunkwan University,School of Electronic and Electrical Engineering
[2] Samsung Electro-Mechanics Co. Ltd.,Materials & Devices Lab., Corporate R&D Institute
[3] Hanyang University,Department of Chemistry and Applied Chemistry
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关键词
retention; nanoparticle; core-shell structure; organic memory; pentacene;
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摘要
In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices.
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页码:276 / 280
页数:4
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