Effect of the line tension at the vapor-liquid-solid boundary on the growth of silicon nanocrystals

被引：0
|
作者：
V. A. Nebol’sin
A. I. Dunaev
M. A. Zavalishin
机构：
[1] Voronezh State Technical University,
来源：
Inorganic Materials | 2008年 / 44卷
关键词：
Contact Angle; Line Tension; Droplet Radius; Silicon Nanocrystals; Nanowire Growth;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We examine the thermodynamic aspects of the effect of the line tension at a bent vapor-liquid-solid boundary on quasi-one-dimensional growth of silicon nanowires. Experimental data demonstrate that there is a limiting size of solvent nanodrops below which they cannot exist in equilibrium and that there is a limiting nanowire diameter starting at which the increase in line tension with decreasing diameter prevents nanocrystal growth at a given supersaturation.
引用
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页码：559 / 562
页数：3
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