Bipolar interface-type resistive switching effect in the MoS2–xOx film

Resistance random access memories (RRAM) show excellent potential applications for nonvolatile data storage. Recently, one of the most representative materials is the MoS2–xOx fabricated by oxidation of the MoS2 flake. The resistive switching (RS) effect was observed in the graphene/MoS2–xOx/graphene device. This bulk-type RS device has a low Roff/Ron ratio. In addition, interface-type RS effect can be more attractive, which is not explored in MoS2–xOx devices yet. In this work, a bipolar interface-type RS effect is observed in Au/MoS2–xOx (MSO)/Au device for the first time. By inserting the Ti layer between top Au and MSO layers, a high stable bipolar interface-type RS effect is observed, and the Roff/Ron ratio is significantly increased by two orders of magnitude. The performance improvement can be understood by the redox reaction of the interface Ti/MSO. This work could provide a reference for improving the performance of RS devices.