Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

被引：0

作者：

Toshiki Makimoto

Kazuhide Kumarkura

Toshio Nishida

Naoki Kobayashi

机构：

[1] NTT Corporation,NTT Basic Research Laboratories

来源：

Journal of Electronic Materials | 2002年 / 31卷

关键词：

GaN; InGaN; band offset; p-InGaN; heterojunction diode; capacitance-voltage characteristics; valence-band discontinuity;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEV) increases with the In mole fraction (x) and is expressed as ΔEV (eV)=0.85x for x≤0.28. The ΔEV value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

引用

页码：313 / 315

页数：2

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