Enhanced dielectric properties of barium strontium titanate thin films by doping modification

被引：0
|
作者：
Libin Gao
Zhipu Guan
Shixian Huang
Kexin Liang
Hongwei Chen
Jihua Zhang
机构：
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Electronic Science and Engineering
[2] Collaboration Innovation Center of Electronic Materials and Devices,undefined
[3] University of Electronic Science and Technology of China,undefined
[4] School of Materials and Energy,undefined
来源：
Journal of Materials Science: Materials in Electronics | 2019年 / 30卷
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摘要：
Barium strontium titanate (BaxSr1–xTiO3, BST) thin films have large dielectric constant, low dielectric loss, especially the high dielectric tunability, which make them prospective candidates for microwave tunable applications. Resent developments in BST thin films by doping modification are reviewed. The A-site doping, B-site doping, and both sites codoping modifications are summarized and analyzed, respectively. The comparison of dielectric properties and microstructure of the BST thin films with different sites doping modifications is critically analyzed. The single A-site or B-site doping modification cannot obtain the BST thin films with balanced enhancement of the dielectric properties. However, the different elements codoping in both A-site and B-site of BST thin films is demonstrated to be an effective method to achieve balanced dielectric property optimization.
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页码：12821 / 12839
页数：18
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