Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride

被引：0
|
作者：
Yiming Zhu
Xinsheng Wang
Mei Zhang
Congzhong Cai
Liming Xie
机构：
[1] Chongqing University,State Key Laboratory of Coal Mine Disaster Dynamics and Control, Department of Applied Physics
[2] National Center for Nanoscience and Technology,CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience
来源：
Nano Research | 2016年 / 9卷
关键词：
chemical vapor deposition; two-dimensional materials; ZrS; electrical transport; mobility;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metalinsulator transition, and T–γ (γ ~ 0.82–1.26) temperature dependent mobility were observed in the ZrS2 films.
引用
收藏
页码：2931 / 2937
页数：6
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