InGaAs/InP evanescently coupled one-sided junction waveguide photodiode design

被引：0
|
作者：
Jie Xu
Xiupu Zhang
Ahmed Kishk
机构：
[1] Concordia University,iPhotonics Laboratories, Department of Electrical and Computer Engineering
[2] Concordia University,Department of Electrical and Computer Engineering
来源：
Optical and Quantum Electronics | 2020年 / 52卷
关键词：
Waveguide photodiode; One-sided junction photodiode; Evanescently coupled; Photogeneration rate;
D O I：
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学科分类号：
摘要：
An evanescently coupled one-sided junction waveguide photodiode (EC-OSJ-WGPD) is proposed and investigated numerically. The one-sided junction photodiode has a simple structure, while the characteristics of high speed and high output power are maintained. The designed EC-OSJ-WGPD with an absorption layer thickness of 350 nm achieves a bandwidth of 44.5 GHz and responsivity of 0.98 A/W. Comprehensive analyses of the EC-OSJ-WGPD are presented including photogeneration rate, internal optical power distribution, energy band diagram, internal electric field, photocurrent, and 3-dB bandwidth.
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