Formation of metallic nanophases in silica by ion-beam mixing Part I: Mixing mechanisms

被引：0
|
作者：
L. Thomé
J. Jagielski
G. Rizza
F. Garrido
J.C. Pivin
机构：
[1] Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse,
[2] IN2P3-CNRS,undefined
[3] 91405 Orsay Campus,undefined
[4] France,undefined
[5] Institute of Electronic Materials Technology,undefined
[6] Wolczynska 133,undefined
[7] 01-919 Warsaw,undefined
[8] Poland,undefined
来源：
Applied Physics A | 1998年 / 66卷
关键词：
PACS: 61.70.WP; 61.80.Jh; 64.75.+g; 78.65.-s;
D O I：
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中图分类号：
学科分类号：
摘要：
matrix is studied by means of the Rutherford backscattering technique. Two different mechanisms are observed: at low temperature (300 K and below) the variance of the mixed profile varies with the square of the ion fluence, whereas at higher temperature (400 K to 620 K) a linear variation is found. The low-temperature kinetics are accounted for by the migration of Ag-defect complexes after introduction of Ag atoms into the silica matrix by a ballistic process. A combination of ballistic and radiation-enhanced diffusion processes explains the results obtained at high temperature. This work emphasizes the role of the presence of metallic clusters on the migration of metal atoms in silica.
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页码：327 / 334
页数：7
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